Memory Switching Simulation in Resonant Tunneling Devices

Olin Hartin

Memory Switching Simulation in Resonant Tunneling Devices

Outline of Our Work

Memory Switching

Simulated Device Characteristics

Simulated Conduction Band Edge

Simulation

Laboratory Measured Data

Schrodinger Poisson

Schrodinger Solution

PP Presentation

Double Barrier Parameter Study

Double Barrier Parameter Study

PP Presentation

PP Presentation

Multi-Valley Solution

Multi-Valley Solution

Multi- and Single Valley Quasi-Bound States

Multi- and Single Valley Quasi-Bound States

Multiple States in Multi-Valley Simulations

Summary & Future Simulation Work

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