We have shown DBRTD’s which demonstrate multiple solutions. These multiple solutions occur in a class of devices with N+ doped layers near heterostructure quantum wells. These phenomenon are observed in simulations and in the laboratory. Simulations have been done mainly using a Schrodinger Poisson self consistent solver. This program does effective mass, envelope equation solutions for single and multiple valleys. This type of modeling is an computationally efficient method of examining effects traditionally modeled using a tight binding simulation.

Observations in the laboratory are similar. Since there are many physical processes that are not modeled using the simulation process that we have chosen, we expect to see only rough correlation between the laboratory measurements and simulations.

We are in the process of modeling these devices using other methods.