Research in the Microelectromagnetic Device Group

The University of Texas at Austin

For further information contact Professor Dean Neikirk at

neikirk@mial.utexas.edu

Resonant Tunneling Devices


"Influence of Space Charge and Quantum Well Negative Resistances on Resonant Tunneling Diodes," V.P. Kesan, D. R. Miller, V. K. Reddy, K. K. Gullapalli, and D.P. Neikirk.

"Experimental Operation of the Quantum Well Injection Transit Time (QWITT) Diode," V. P. Kesan, A. Mortazawi, D. R. Miller, V. K. Reddy, A. Tsao, and D.P. Neikirk.

"AlAs/In0.53Ga0.47As Depletion Edge Modulated QWITT (DEMQWITT) Diode," Vijay Reddy, Shiva Javalagi, and Dean P. Neikirk

V. P. Kesan, D. P. Neikirk, B. G. Streetman, and P. A. Blakey, "A New Transit Time Device Using Quantum Well Injection," IEEE Electron Device Lett., vol. EDL-8, pp. 129-131, 1987.

V. P. Kesan, A. Mortazawi, D. P. Neikirk, and T. Itoh, "Monolithic Millimeter-Wave Oscillator using a Transmission Line Periodically Loaded by QWITT Diodes," Electron. Lett., pp. 666-667, 1988.

V. P. Kesan, A. Mortazawi, D. R. Miller, T. Itoh, B. G. Streetman, and D. P. Neikirk, "Microwave Frequency Operation of the Quantum Well Injection Transit Time (QWITT) Diode," Electron. Lett., pp. 1473-1474, 1988.

V. P. Kesan, D. P. Neikirk, T. D. Linton, P. A. Blakey, and B. G. Streetman, "Influence of Transit Time Effects on the Optimum Design and Maximum Oscillation Frequency of Quantum Well Oscillators," IEEE Trans. Electron Devices, vol. ED-35, pp. 405-413, 1988.

V. P. Kesan, A. Mortazawi, D. R. Miller, V. K. Reddy, D. P. Neikirk, and T. Itoh, "Microwave and Millimeter-Wave QWITT Diode Oscillators," IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1933-1941, 1989.

V. Kesan, "Quantum Well Devices for Microwave and Millimeter Wave Oscillator Applications," 1989, PhD, The University of Texas at Austin.

C. S. Kyono, V. P. Kesan, D. P. Neikirk, C. M. Maziar, and B. G. Streetman, "Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single barrier structures grown by MBE," Appl. Phys. Lett., vol. 54, pp. 549-551, 1989.

V. K. Reddy, A. J. Tsao, and D. P. Neikirk, "High Peak-to-Valley Current Ratio AlGaAs/AlAs/GaAs Double Barrier Resonant Tunneling Diodes," Electron. Lett., vol. 26, pp. 1742-1744, 1990.

A. J. Tsao, V. K. Reddy, and D. P. Neikirk, "Epitaxial Liftoff of AlAs/GaAs Double Barrier Resonant Tunneling Diodes," Electron. Lett., vol. 27, pp. 484-486, 1991.

A. J. Tsao, V. K. Reddy, D. R. Miller, K. K. Gullapalli, and D. P. Neikirk, "The effect of barrier thickness asymmetries on the electrical characteristics of AlAs/GaAs double barrier resonant tunneling diodes," J. Vac. Sci. Technol. B, vol. 10, pp. 1042-1044, 1992.

S. Javalagi, V. Reddy, K. Gullapalli, and D. Neikirk, "High Efficiency Microwave Diode Oscillators," Electron. Lett., vol. 28, pp. 1699-1701, 1992.

V. K. Reddy and D. P. Neikirk, "Influence of Growth Interruption on I - V Characteristics of AlAs/GaAs Double Barrier Resonant Tunneling Diodes," J. Vac. Sci. Technol. B, vol. 10, pp. 1045-1047, 1992.

V. K. Reddy and D. P. Neikirk, "High breakdown voltage AlAs/InGaAs quantum barrier varactor diodes," Electron. Lett., vol. 29, pp. 464-466, 1993.

A. Tsao, "Molecular Beam Epitaxial Growth and Fabrication of Microwave and Photonic Devices for Hybrid Integration on Alternative Substrates," 1993, PhD, The University of Texas at Austin.

V. Reddy, "Characterization of High Frequency Oscillators and Varactor Diodes Grown by Molecular Beam Epitaxy," 1994, PhD, The University of Texas at Austin.

Quantum Interference and Memory Switching in Quantum Devices

A short paper introducing memory switching and non-volatile storage in quantum well diodes.

A short paper on time dependent simulation of transitions in a memory switching quantum well diode.

A. C. Campbell, V. P. Kesan, G. E. Crook, C. M. Maziar, D. P. Neikirk, and B. G. Streetman, "Impedance Switching Effects in GaAs/AlAs Barrier Structures," Electron. Lett., vol. 23, pp. 926-927, 1987.

A. C. Campbell, V. P. Kesan, G. E. Crook, C. M. Maziar, D. P. Neikirk, and B. G. Streetman, "Capacitive Hysteresis Effects in 5.0nm Single and Double Barrier AlAs Tunneling Structures Grown by MBE," J. Vac. Sci. Technol. B, vol. 6, pp. 651-656, 1988.

D. R. Miller and D. P. Neikirk, "Simulation of Intervalley Mixing in Double Barrier Diodes Using the Lattice Wigner Function," Appl. Phys. Lett., vol. 58, pp. 2803-2805, 1991.

K. K. Gullapalli, D. R. Miller, and D. P. Neikirk, "Hybrid Boltzmann Transport - Schrödinger Equation Model for Quantum Well Injection Transit (QWITT) Diodes," IEEE International Electron Devices Meeting, Washington, DC, Dec. 8-11, 1991, pp. 18.5.1-18.5.4.

D. R. Miller and D. P. Neikirk, "Lattice Wigner Simulations of Quantum Devices," IEEE International Electron Devices Meeting, San Francisco, CA, Dec. 13-16, 1992, pp. 561-564.

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk, "Observation of zero-bias multi-state behavior in selectively doped two-terminal quantum tunneling devices," IEEE International Electron Devices Meeting, San Francisco, CA, Dec. 13-16, 1992, pp. 479-482.

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk, "Multiple self-consistent solutions at zero bias and multiple conduction curves in quantum tunneling diodes containing N- - N+ - N- spacer layers," Appl. Phys. Lett., vol. 62, pp. 2971-2973, 1993.

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk, "Experimental observation of multiple current - voltage curves and zero-bias memory in quantum well diodes with N- - N+ - N- spacer layers," Appl. Phys. Lett., vol. 62, pp. 2856-2858, 1993.

K. K. Gullapalli, D. R. Miller, and D. P. Neikirk, "Wigner-Poisson simulation of memory switching heterostructure tunneling diodes," IEEE International Electron Devices Meeting, Washington, DC, Dec. 5-8, 1993, pp. 109-112.

K. K. Gullapalli, D. R. Miller, and D. P. Neikirk, "Simulation of quantum transport in memory-switching double-barrier quantum-well diodes," Phys. Rev. B, vol. 49, pp. 2622-2628, 1994.

K. K. Gullapalli and D. P. Neikirk, "Incorporating spatially varying effective-mass in the Wigner-Poisson model for AlAs/GaAs resonant-tunneling diodes," Proceedings of the Third Annual International Workshop on Computational Electronics, Portland, OR, May 18-20, 1994, pp. 171-174.

K. K. Gullapalli, "Heterostructure Device Simulation using the Wigner Function," 1994, PhD, The University of Texas at Austin.

Olin Hartin, dissertation title: "Quantum Transport Simulations of Novel Compound Semiconductor Devices," May, 1998.

 

Olin Hartin's recent work on memorty switching.



Please also see information on our research summary page.