MICROWAVE DEVICES
fee: $96.00
| unique | days | time | room | instructor | seating |
|---|---|---|---|---|---|
| 15110 | MW | 1230 - 200P | ENS 145 | NEIKIRK | RESTRICTED |
Course Syllabus EE 396K Microwaves Devices; Unique Number 15110
Spring, 2003; M-W 12:30-2:00, ENS 145
Instructor: Dean P. Neikirk, office: ENS 635, phone 471-4669; MER 1.606C,
471-8549
e-mail: neikirk@mail.utexas.edu
Office Hours: M-W 2:00-3:00; other times by appointment; on the following
days I have Faculty Council or Graduate Assembly meetings at 2pm: 1/27, 1/29,
2/3, 2/17, 3/3, 3/17, 3/26, 3/31, 4/14, 4/23, 4/28, 5/5
Class Web Page:
http://weewave.mer.utexas.edu/DPN_files/courses/MicroWave_Devices/MicroWave_Dev.html
Prerequisites: EE 325; EE 325K, EE 339, and EE 363M won't hurt, but are not
required
Objectives: The intrinsic speed/frequency performance of semiconductor devices has increased dramatically in the last decade and a half. For instance, today you can buy a MMIC (monolithic millimeter / microwave integrated circuit) amp with performance that ten years ago would probably have cost at least ten times more. Due to the extremely rapid growth of the Personal Communications Services (PCS) industry, the demand for knowledge about rf circuits and microwave wireless systems has also increased dramatically. Finally, as digital systems achieve speeds with GHz effective bandwidths, microwave issues have begun to influence even microprocessor design!
Course Outline:
i) Review of network formulations: Z, Y, S, H, ABCD parameters
- matching networks
- microwave measurement techniques
i) Basic physical processes that determine ultimate speed/frequency limitations
in semiconductor devices; "classical" microwave devices that clearly illustrate
these phenomena:
- Transferred electron devices (TEDs)
- transit time effects
ii) "Extrinsic" effects which often produce more severe limits than the
"intrinsic" device physics.
- contact resistance, space charge resistance
- impact of finite conductivity; skin resistance
- causality and propagation delays
iii) Basic rf models and properties of MISFETs and MESFETs.
As a class goal, we will try to prove or disprove the following conjecture:
The physical world is fundamentally unfriendly towards complex (read: generally
useful) electronic systems which operate at frequencies in excess of 100 GHz or
speeds faster than 10 psec. I first proposed this in class nine years ago, and
I’ve seen little since then to suggest we change this goal....
Class Projects: You must complete a class project, which will , in the end, count for 50% of your grade. The project will consist of the identification of a state-of-the art high frequency/speed SYSTEM, and a detailed, critical examination of relevant literature to identify what components limit the performance of this system. A written paper with a preliminary review is due at mid-term, and counts for 20% of your grade (it will take the palce of a mid-term exam). You will then prepare a throuroughly referenced final paper on your findings, as well as presenting a DETAILED, ~20 minute, oral presentation to the class. You will be expected to explain your findings in language we can all understand; I will not accept "conventional" explanations which consist primarily of fancy jargon. Before making your class presentation expect to spend at least two hours with me, with a return visit to clarify any problems (and I guarantee I will find something to object to) identified in your first meeting with me. Class presentations will probably begin in mid-April, but we may try and schedule two half days or one full day at the end of the semester for a “conference” to make all the presentations at once. Final written term papers and PowerPoint slides from your talk are due at the end of the semester, and will be compiled into a class web page.
Reference texts: P. Ladbrooke, MMIC Design: GaAs FETs and HEMTs. Norwood, MA:
Artech House, Inc., 1989 (ISBN 0-89006-314-1); Microwave Semiconductor Devices,
by Sigfrid Yngvesson, Kluwer Academic Publishers, 1991 (ISBN 0-7923-9156-X); S.
M. Sze, “High-Speed Semiconductor Devices,” . New York: John Wiley & Sons, Inc.,
1990 (ISBN 0-471-62307-5).
Other useful texts: G. Gonzalez, Microwave Transistor Amplifiers: Analysis and
Design, second ed. Upper Saddle River, NJ: Prentice-Hall, Inc., 1997 (ISBN
0-13-254335-4); Physics of Semiconductor Devices editor S. M. Sze; Microwave
Engineering, by D. Pozar, Addison-Wesley Publishing Co. (1990); Fields and Waves
in Communication Electronics by S. Ramo, J. R. Whinnery, and T. Van Duzer.
Grades
Your grades will be based upon performance on homework, exams, and the class
project. Homework will be assigned periodically; credit for late homework
will be reduced at a rate of 10% per class the work is late.
The weighting for different areas is:
Attendance
20%
Homework
10%
Mid term project paper 20%
Class project
30%
Final
20%
100%
The worst-case grades will be based on:
A 100-90% of total points
available
B 80-89%
C 70-79%
D 55-70%
F 0-55%
THE UNIVERSITY OF TEXAS AT AUSTIN PROVIDES UPON REQUEST APPROPRIATE ACADEMIC
ADJUSTMENTS FOR QUALIFIED STUDENTS WITH DISABILITIES. FOR MORE
INFORMATION, CONTACT THE OFFICE OF THE DEAN OF STUDENTS AT 471-6259, 471-4641
TDD OR THE COLLEGE OF ENGINEERING DIRECTOR OF STUDENTS WITH DISABILITIES AT
471-4382. PLEASE SEE
http://www.utexas.edu/depts/dos/ssd/
OFFICIAL UNIVERSITY CALENDAR AVAILABLE AT:
http://www.utexas.edu/student/registrar/02-03long.html
LAST DAY OF ADDS/DROPS: 4TH DAY OF CLASSES (Jan. 16); LAST DAY TO ADD A COURSE:
12th class day (Jan. 29); LAST DAY TO DROP WITHOUT POSSIBLE ACADEMIC PENALTY:
Feb. 10. Notice of planned absences for the observance of religious holy days
must be submitted two weeks in advance of the date of the absences. (See
http://www.utexas.edu/student/registrar/catalogs/gi01-02/ch4/ch4g.html#attend
, for requirements.)
Course Evaluation: University and optional in-house survey during last week of class.
Policy on CHEATING:
You are expected to do your own work at ALL times. I expect you will often
discuss assignments, but you MUST do your own ORIGINAL written work. Any
evidence of cheating or plagiarism* will be treated as grounds for FAILURE in
the class.
The following is extracted from the document "On Being A Scientist: Responsible Conduct In Research" by the COMMITTEE ON SCIENCE, ENG, NATIONAL ACADEMY OF ENGINEERING, INSTITUTE OF MEDICINE, NATIONAL ACADEMY PRESS, Washington, D.C. 1995.
Copyright © 1994 by the National Academy of Sciences. All rights reserved. This document may be reproduced solely for educational purposes without the written permission of the National Academy of Sciences. Internet Access: This report is available on the National Academy of Sciences' Internet host. It may be accessed via World Wide Web at http://www.nas.edu/ . As a case study, note the material below is enclosed in quotation marks, the URL’s locating the original material are given, and I have specifically secured NAS permission to reprint these passages in this syllabus.
*"A CASE OF PLAGIARISM
"May is a second-year graduate student preparing the written portion of her
qualifying exam. She incorporates whole sentences and paragraphs verbatim
from several published papers. She does not use quotation marks, but the
sources are suggested by statements like '(see . . . for more details).'
The faculty on the qualifying exam committee note inconsistencies in the writing
styles of different paragraphs of the text and check the sources, uncovering
May's plagiarism.
"After discussion with the faculty, May's plagiarism is brought to the
attention of the dean of the graduate school, whose responsibility it is to
review such incidents. The graduate school regulations state that
'plagiarism, that is, the failure in a dissertation, essay, or other written
exercise to acknowledge ideas, research or language taken from others' is
specifically prohibited. The dean expels May from the program with the
stipulation that she can reapply for the next academic year." [ URL:
http://www.nap.edu/readingroom/books/obas/contents/misconduct.html - Plagiarism]
"A broad spectrum of misconduct falls into the category of plagiarism,
ranging from obvious theft to uncredited paraphrasing that some might not
consider dishonest at all. In a lifetime of reading, theorizing, and
experimenting, a person's work will inevitably incorporate and overlap with that
of others. However, occasional overlap is one thing; systematic use of the
techniques, data, words, or ideas of others without appropriate acknowledgment
is another." [ URL:
http://www.nap.edu/readingroom/books/obas/contents/appendix.html - Plagiarism]
THIS SCHEDULE IS WILL BE MODIFIED ONCE I SURVEY THE INTERESTS OF THE CLASS!
| Lecture | Date | Date | Reading from | |||
| Yng-vesson | Sze, Physics of Semi. | Sze, High-Speed Semi. | Ladbrooke | |||
| 1 | 1/13 | Introduction, Review: Semiconductors, bands, effective masses | Ch 1 | Ch 1 | Ch 1, 2 | |
| 2 | 1/15 | Parasitic lead example, T-lines; Gunn effect | ||||
| 3 | 1/22 | Classical microwave devices: TEDs; negative differential conductivity; single temp., two-valley v-E model | Ch 2 | Ch 11 | ||
| 4 | 1/27 | small signal Gunn diode analysis | ||||
| 5 | 1/29 | domain prop. velocity and equal area rule | ||||
| 6 | 2/3 | dc to rf efficiency, Gunn diode power/frequency limits | ||||
| 7 | 2/5 | Current-voltage waveforms and efficiency | Ch 4 | Ch 9 | Ch 4 | |
| 8 | 2/10 | charged sheet drift: Ramo-Shockley theorem; space charge resistance and velocity-saturated effects; “transit/drift” region small signal impedance | Ch 3 | Ch 10 | Ch 3 | |
| 9 | 2/12 | IMPATT injector models; small signal analysis | ||||
| 10 | 2/17 | IMPATT diodes continued | ||||
| 11 | 2/19 | |||||
| 12 | 2/24 | high frequency IMPATT power; tunnel diodes | ||||
| 13 | 2/26 | T-line model for resonant tunneling | ||||
| 14 | 3/3 | QWITTs | ||||
| 15 | 3/5 | QWITTs | ||||
| 3/10-3/14 | SPRING BREAK | |||||
| 16 | 3/17 | Power, frequency limitations | ||||
| 17 | 3/19 | Parasitics: contact resistance | ||||
| 18 | 3/24 | contact resistance | ||||
| 19 | 3/26 | spreading resistance | Ch 5 | Ch 5 | ||
| 20 | 3/31 | impact of epi resistance: "C"-V effects | ||||
| 21 | 4/2 | T-line models for resistance calculations | Ch 9 | Ch 9 | ||
| 22 | 4/7 | T-line models for resistance calculations | ||||
| 23 | 4/9 | MISFETS and MESFETS | ||||
| 24 | 4/14 | |||||
| 25 | 4/16 | |||||
| 26 | 4/21 | Class presentations | ||||
| 27 | 4/23 | Class presentations | ||||
| 28 | 4/28 | Class presentations | ||||
| 29 | 4/30 | Class presentations; Last Class |
FINAL: THURS, May 8, 2:00-5:00