Process Step




Device Chip




Materials Properties Test Chip
 
on
one p-type, one n-type pre-oxidized chip
 on one p-type, one
n-type pre-oxidized chip
 




(Lab 2 & 3)
 




1
ellipsometric oxide thickness measurement




2
Photoresist 1: diffusion, Holberg Mask Level 1
Photoresist
1: half mask
 




3
Etch 1st diffusion windows
Etch oxide from half of chip




4
Strip all resist
Strip all resist
 




(Lab 4)
 




5


  
p-type sample: phosphorus predep, 20 min 
  
n-type sample: boron predep, 30 min (CHECK TIMEs) 



  
p-type sample: phosphorus predep, 20 min 
  
n-type sample: boron predep, 30 min (CHECK TIMEs) 

 




6
Strip boro/phospho-silicate glass in BHF
Same as device
chips; 4-point probe for sheet R




(Lab 5 & 6)
 
 




7
Both p- & n-type: drive-in, 1100°C, 30 min.
Same
as device chips; after drive: oxide thickness




8
PR 2: gate ox pattern, Holberg Mask Level 2
 NA




9
BHF oxide etch
Same as device chips; 4-point probe for
sheet R




10
Strip PR
NA
 




(Lab 7 & 8)
 




11
Gate oxidation: 1100°C, with TCE (CHECK FOR UPDATED DETAILS
ON THIS PROCESS)
Same as device chip; after ox: oxide thickness




12
PR 3: contact windows, Holberg Mask Level 3
 NA




13
BHF oxide etch
same as device chip; 4-pt probe for final
Rs; junction groove for xj
 




(Lab 9-11)
 




14
Backside damage
 
 




15
Strip PR
 




16
Front side Al evaporation
 
 




17
PR 4: Metal contacts, Holberg Mask Level 4
 




18
Aluminum contact etch
 
 




19
Strip PR
 




20
Backside metallization
 
 




21
Form contacts