Course Syllabus: EE 440/396K Fall 2001 UNDER CONSTRUCTION

Microelectronics/VLSI Fabrication Techniques

EE 440 Unique Number 15230; EE 396K Unique Numbers 15725, Fall 2001, M-W-F 8:00-9:00, ENS 302

Instructor: Dean Neikirk, ENS 634, phone 471-4669; MERB 1.606F, 471-8549; e-mail: neikirk@mail.utexas.edu

TA's:, not yet determined

UT Blackboard site: http://courses.utexas.edu/ ; THIS SITE REQUIRES A UT-EID TO ACCESS

Web site: http://weewave.mer.utexas.edu/DPN_files/courses/FabLab/IC_Fab_class.html

Office Hours: M-F, 9:00-10:00, W: probably 1-2, I’ll confirm this after classes start; or by arrangement

Prerequisites: EE 339 Introduction to Electron Devices or equivalent

Objectives: The purpose of this course is to provide students with technical background and hands-on laboratory experience in silicon device fabrication. The course involves approximately three hours of lecture and three hours of laboratory per week for one semester. The following is an outline of subjects to be presented in the lecture portion of the course and experiments to be performed in the laboratory.

Lecture:

1. Semiconductor review and survey of IC processing.

2. Silicon crystal growth and wafer preparation.

3. Oxidation.

4. Doping techniques: diffusion, ion implantation.

5. Deposited thin films: polysilicon, silicon dioxide, silicon nitride, metals, silicides.

6. Metallization and contacts.

7. Epitaxial growth.

8. Lithography: optical, electron beam, X-ray.

9. Etching techniques: wet chemical, dry plasma.

10. Yield considerations and contamination.

Laboratory:

Fabrication and testing of diffused resistors and MOS devices. In these experiments masks will be used containing arrays of the various discrete devices.

A. Photolithography.

B. Predep and drive.

C. Gate Oxide Growth.

D. Contact deposition and annealing.

E. Junction depth and sheet resistance measurements.

F. I-V and breakdown measurements.

G. MOS capacitor testing.

H. MOSFET testing.

I. Resistor testing.

Text Book: J. Plummer, M. Deal, and P. Griffin, Silicon VLSI Technology. Upper Saddle River, New Jersey: Prentice Hall, Inc., 2000.

Useful references:

S. A. Campbell, The Science and Engineering of Microelectronic Fabrication: Oxford University Press, 1996.

VLSI Fabrication Principles by S.K. Ghandhi; VLSI Technology editor S.M. Sze

Device Electronics for Integrated Circuits by R.S. Muller and T.I. Kamins

MOS Physics and Technology by E.H. Nicollian and J.R. Brews

Physics of Semiconductor Devices ed. S. Sze, Solid State Electronic Devices, Streetman

Grades

Your grades will be based upon performance in lab, lab reports, homework, and exams. Details of work expected in conjunction with lab are given in the lab manual (see next page).

The weighting for different areas is :

Homework 15%

Exam I 20%

Exam II 20%

Lab grade 20%

Final 25%

100%

The worst-case grades will be based on:

A 100-90% of

total points available

B 80-89%

C 70-79%

D 55-70%

F 0-55%

The University of Texas at Austin provides upon request appropriate academic adjustments for qualified students with disabilities. For more information, contact the Office of the Dean of Students at 471-6259, 471-4641 TDD or the college of engineering director of students with disabilities at 471-4382. Please see http://www.utexas.edu/depts/dos/ssd/

OFFICIAL UNIVERSITY CALENDAR AVAILABLE AT: http://www.utexas.edu/student/registrar/00-01long.html

LAST DAY TO DROP: 4TH DAY OF CLASSES (Sept. 5); BETWEEN THEN AND SEPT. 27 MUST GO TO DEAN'S OFFICE; AFTER Sept. 27 THERE MAY BE AN ACADEMIC PENALTY; after Oct. 25 drops allowed by UT only for extreme non-academic reasons. Notice of planned absences for the observance of religious holy days must be submitted two weeks in advance of the date of the absences. (See General Information, chapter 4, for requirements.)

Course Evaluation: University and optional in-house survey during last week of class.

Policy on CHEATING:

You are expected to do your own work at ALL times. I expect you will often discuss assignments, but you MUST do your own ORIGINAL written work. Any evidence of cheating or plagiarism* will be treated as grounds for FAILURE in the class.

The following is extracted from the document "On Being A Scientist: Responsible Conduct In Research" by the COMMITTEE ON SCIENCE, ENG, NATIONAL ACADEMY OF ENGINEERING, INSTITUTE OF MEDICINE, NATIONAL ACADEMY PRESS, Washington, D.C. 1995.

Copyright © 1994 by the National Academy of Sciences. All rights reserved. This document may be reproduced solely for educational purposes without the written permission of the National Academy of Sciences. Internet Access: This report is available on the National Academy of Sciences' Internet host. It may be accessed via World Wide Web at http://www.nas.edu, via Gopher at gopher.nas.edu, or via FTP at ftp.nas.edu.

*"A CASE OF PLAGIARISM

"May is a second-year graduate student preparing the written portion of her qualifying exam. She incorporates whole sentences and paragraphs verbatim from several published papers. She does not use quotation marks, but the sources are suggested by statements like '(see . . . for more details).' The faculty on the qualifying exam committee note inconsistencies in the writing styles of different paragraphs of the text and check the sources, uncovering May's plagiarism.

"After discussion with the faculty, May's plagiarism is brought to the attention of the dean of the graduate school, whose responsibility it is to review such incidents. The graduate school regulations state that 'plagiarism, that is, the failure in a dissertation, essay, or other written exercise to acknowledge ideas, research or language taken from others' is specifically prohibited. The dean expels May from the program with the stipulation that she can reapply for the next academic year." [ URL: http://www.nap.edu/readingroom/books/obas/contents/misconduct.html#Plagiarism ]

"A broad spectrum of misconduct falls into the category of plagiarism, ranging from obvious theft to uncredited paraphrasing that some might not consider dishonest at all. In a lifetime of reading, theorizing, and experimenting, a person's work will inevitably incorporate and overlap with that of others. However, occasional overlap is one thing; systematic use of the techniques, data, words, or ideas of others without appropriate acknowledgment is another." [ URL: http://www.nap.edu/readingroom/books/obas/contents/appendix.html#Plagiarism ]

Special Note to EE396K students:

Since you are enrolled for graduate credit, I will expect you to do more than the undergraduates. This will take the form of a term lab project or a term review paper (approximately 5-10 type-written pages long) on a topic related to device fabrication or processing. You must pick a topic and clear it with me by Weds., Oct. 4. The paper should review current work in the literature related to your topic. It is due on Fri., Dec. 8. More details to follow. The project/paper grade will be factored into your lab grade.

Laboratory Manual

You must purchase a laboratory manual. It will be available from HKN here in ENS. The manual contains essential information on the laboratory, lab procedures, and work required for your lab grade. YOU MUST GET A COPY AS SOON AS POSSIBLE. As new materials become available I will notify you.

Copies of the viewgraphs I use in class will be available via our class home page.

Readings should be completed BEFORE class (subject to revision as I get behind). Readings from Sze or Ghandhi are optional.

Lecture	Date	Topic	Sze 1st ed	Ghandhi 2nd ed	Campbell
1	8/30	Introduction, Lab assignments
2	9/1	CMOS Process Overview			3-9
3	9/6	Review of semiconductors	1-8	1-23	10-20
4	9/8	Orientation effects, impurities		23-45
5	9/11	Defects; Lab Report 0 due in lecture!!	14-17	45-63
6	9/13	Crystal Growth	17-23	102-113	21-35
7	9/15	Crystal growth cont	23-31	113-134
8	9/18	Impurities in CZ, Gettering, Oxygen in Si	31-51	134-144
9	9/20	Basic oxidation processes	98-106	451-457	68-77
10	9/22	Oxidation kinetics, Halogenic oxidation	106-110	458-463
11	9/25	Doping effects; Critique of Lab Report 0 due	111-115	463-470	84-94
12	9/27	Thin oxides, OSF's, mobile charge	115-125	470-485	77-83
13	9/29	Diffusion, Fick's laws, Diffusion profiles, Fick's 2nd law	272-279	150-159	39-47
14	10/2	Vacancy-Impurity interactions	279-286	159-171	47-52
15	10/4	diffusion continued, Graduate Student paper topics due		171-197	52-65
16	10/6	Boron & phosphorus diffusion; review	286-297	210-224
17	10/9	EXAM I
18	10/11	Ion implantation	327-340	368-389	98-112
19	10/13	Implantation: channeling, damage	340-348	389-407	112-123
20	10/16	Annealing of implants; applications	348-362	407-443
21	10/18	Irvin Curves, evaluation of doped layers	299-307	235-250
22	10/20	Evaluation techniques cont
23	10/23	Hall effect, Lab Report I due
24	10/25	kinetic gas theory, step coverage, physical vapor deposition
25	10/27	thermal evaporation, sputtering
26	10/30	Chemical Vapor Deposition, kinetic gas theory, poly Si	233-248	510-527
27	11/1	poly, oxide, nitride	248-269	527-546
28	11/3	Epitaxy	55-63	258-272
29	11/6	Autodoping, pattern shift; Critique of Report I due	63-79	284-312
30	11/8	Metallization	375-396	548-570
31	11/10	Contacts	396-409
32	11/13	Electromigration	409-418
33	11/15	EXAM II
34	11/17	Lithography	141-155	662-674
35	11/20	Mask aligners, Lab Report II due		674-685
36	11/22	Resists
37	11/27	Advanced Lithography	155-180	685-700
38	11/29	Etching: bias & selectivity	196-199	613-620
39	12/1	Selectivity cont	206-210
40	12/4	Plasma etching	184-196	620-645
41	12/6	Plasma processing;	212-228
42	12/8	Review; Graduate Projects/Papers Due; Critique of Report II due; Lab Report III due

FINAL: Friday, Dec. 15, 9:00 am - 12:00 noon

WWW resources for IC Fab:

Our 440/396K class:

http://weewave.mer.utexas.edu/DPN_files/courses/FabLab/IC_Fab_class.html .

The semiconductor subway:

http://www-mtl.mit.edu/semisubway.html .

University of Illinios IC Fab Class:

http://www.ece.uiuc.edu/ece344/ .

All these applets are accessible from the main page at Buffalo: http://jas2.eng.buffalo.edu/applets/education/index.html

Newsgroups:

sci.electronics.cad

sci.engr.semiconductors

sci.materials

sci.optics

sci.physics

sci.physics.research

sci.techniques.microscopy

comp.lsi